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this is information on a product in full production. december 2013 docid025105 rev 2 1/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 n-channel 800 v, 2.1 typ., 3 a zener-protected supermesh? 5 power mosfets in dpak, to-220fp, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? outstanding r ds(on) * area ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. to-220 to-220fp dpak 1 3 ta b 1 2 3 1 2 3 tab 3 2 1 tab ipak '7$% * 6 am01476v1 order codes v ds r ds(on) max i d p tot std4n80k5 800 v 2.5 3 a 60 w stf4n80k5 20 w STP4N80K5 60 w stu4n80k5 table 1. device summary order code marking packages packaging std4n80k5 4n80k5 dpak tape and reel stf4n80k5 to-220fp tube STP4N80K5 to-220 stu4n80k5 ipak www.st.com
contents std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 2/23 docid025105 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid025105 rev 2 3/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, ipak to-220fp to-220 v ds drain-source voltage 800 v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 1.7 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 12 (1) a p tot total dissipation at t c = 25 c 60 20 60 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 74.5 mj dv/dt (3) 3. i sd < 3 a, di/dt < 100 a/ s, peak v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2500 v t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit dpak, ipak to-220fp to-220 r thj-case thermal resistance junction-case max 2.08 6.25 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w
electrical characteristics std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 4/23 docid025105 rev 2 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.5 a 2.1 2.5 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 175 - pf c oss output capacitance - 20 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 640 v, v gs = 0 - 26 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 640 v, v gs = 0 - 11 - pf r g gate input resistance f=1 mhz, i d = 0 - 15 - q g total gate charge v dd = 640 v, i d = 3 a, v gs = 10 v (see figure 19) -10.5-nc q gs gate-source charge - 2 - nc q gd gate-drain charge - 7.5 - nc
docid025105 rev 2 5/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 electrical characteristics 23 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 1.5 a, r g = 4.7 , v gs = 10 v (see figure 18) - 16.5 - ns t r rise time - 15 - ns t d(off) turn-off-delay time - 36 - ns t f fall time - 21 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 3 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 12 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 3 a, di/dt = 100 a/ s v dd = 60 v t j = 25 c (see figure 20) -242 ns q rr reverse recovery charge - 1.42 c i rrm reverse recovery current - 12 a t rr reverse recovery time i sd = 3 a, di/dt = 100 a/ s v dd = 60 v t j = 150 c (see figure 20) -373 ns q rr reverse recovery charge - 1.98 c i rrm reverse recovery current - 10.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - v
electrical characteristics std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 6/23 docid025105 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15986v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15987v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15988v1
docid025105 rev 2 7/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 electrical characteristics 23 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. normalized gate threshold voltage vs temperature i d 4 2 0 0 8 v ds (v) 16 (a) 4 12 6v 7v v gs =10, 11 v 5 3 1 8v 9v am15989v1 i d 4 2 0 5 7 v gs (v) 9 (a) 6 8 1 3 5 v ds =20v 10 am15990v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =640v i d =3a 300 200 100 0 400 v ds (v) 500 v ds 12 10 600 am15991v1 r ds(on) 3 2 1 0 0 2 i d (a) () 1 4 v gs =10v 0.5 1.5 2.5 am15992v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am15993v1 v gs(th) 1 0.8 0.6 0.4 -50 0 t j (c) (norm) 50 100 i d =100a v ds =v gs am15639v1
electrical characteristics std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 8/23 docid025105 rev 2 figure 14. normalized on-resistance vs temperature figure 15. source-drain diode forward characteristics figure 16. normalized v ds vs temperature figure 17. maximum avalanche energy vs. starting t j r ds(on) 2 1.2 0.4 -50 0 t j (c) (norm) 50 100 0.8 1.6 v gs =10v i d =1.5 a 2.4 am15640v1 v sd 0.5 1.5 i sd (a) (v) 1 2 2.5 0.6 0.7 0.8 0.9 t j =-50c t j =150c t j =25c 1 0.5 am15994v1 v ds -50 0 t j (c) (norm) 50 100 0.9 0.94 0.98 1.02 1.06 1.1 i d = 1ma am15642v1 e as 0 40 t j (c) (mj) 80 0 20 40 120 60 am15995v1
docid025105 rev 2 9/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 test circuits 23 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 10/23 docid025105 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025105 rev 2 11/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 package mechanical data 23 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 12/23 docid025105 rev 2 figure 24. dpak (to-252) type a drawing 0068772_m_type_a
docid025105 rev 2 13/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 package mechanical data 23 figure 25. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters footprint_rev_m_type_a
package mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 14/23 docid025105 rev 2 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid025105 rev 2 15/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 package mechanical data 23 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 16/23 docid025105 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid025105 rev 2 17/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 package mechanical data 23 figure 27. to-220 type a drawing bw\sh$b5hyb7
package mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 18/23 docid025105 rev 2 table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.35 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.15 e 6.40 6.55 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid025105 rev 2 19/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 package mechanical data 23 figure 28. ipak (to-251) drawing 0068771_k
packaging mechanical data std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 20/23 docid025105 rev 2 5 packaging mechanical data table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
docid025105 rev 2 21/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 packaging mechanical data 23 figure 29. tape for dpak (to-252) figure 30. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 22/23 docid025105 rev 2 6 revision history table 14. document revision history date revision changes 09-aug-2013 1 first release 13-dec-2013 2 ? added: ipak package ? added: table 12 and figure 28 ? minor text changes
docid025105 rev 2 23/23 std4n80k5, stf4n80k5, STP4N80K5, stu4n80k5 23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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